My Publications

  1. Y. Rosenwaks, A. Sher, and A. Zussman, "Wave Interference Effects in LPE Layers of Hg1-xCdxTe", Thin Solid Films, 169, 24 -34 (1988).

  2.  

  3. Y. Rosenwaks, L. Burstein, Y. Shapira, and D. Huppert, "Studies of Surface Recombination Velocity at Cu/CdS (1120) Interfaces", J. Phys. Chem., 94, 6842-6847 (1990).

  4.  

  5. Y. Rosenwaks, Y. Shapira, and D. Huppert, "Surface Recombination Velocity of CdS (1120) Interfaces with Metals", Vacuum, 41, 1009-1011 (1990).

  6.  

  7. Y. Rosenwaks, L. Burstein, Y.Shapira, and D. Huppert, "Effects of Reactive versus Unreactive Metals on the Surface Recombination Velocity at CdS and CdSe (1120) Interfaces", Appl. Phys. Lett., 57, 458-460 (1990).

  8.  

  9. Y. Rosenwaks, Y. Shapira, and D. Huppert, "Metal Reactivity Effects on the Surface Recombination Velocity at InP Interfaces", Appl. Phys. Lett., 57, 2552-2554 (1990).

  10.  

  11. P. Besler-Podorowsky, D. Huppert, Y. Rosenwaks, and Y. Shapira, "Picosecond Time Resolved Luminescence Study of n-CdSe Single Crystals: Comparison with CdS", J. Phys. Chem., 95, 4370-4373 (1991).

  12.  

  13. Y. Rosenwaks, Y. Shapira, and D. Huppert, "Surface Recombination Velocity at InP Interfaces", in "Properties of InP", J. Sears editor, INSPEC, IEE, London and New York, 328-331, (1991).

  14.  

  15. Y. Rosenwaks, D. Huppert, and Y. Shapira, "Evidence for low surface recombination velocity on p-InP", Phys. Rev. B, 44, 13097-13100 (1991).

  16.  

  17. Y. Rosenwaks, Y. Shapira, and D. Huppert, "Picosecond time-resolved luminescence studies of surface and bulk recombination processes in InP", Phys. Rev. B, 45, 9108-9119 (1991).

  18.  

  19. Y. Rosenwaks, B. R. Thacker, R. K. Ahrenkiel, and A. J. Nozik, "Electron Transfer Dynamics at p-GaAs/Liquid Interfaces", J. Phys. Chem. (Letters Section), 96, 10096-10098 (1992).

  20.  

  21. Y. Rosenwaks, M. Hanna, D. H. Levi, D. M. Szmyd, R. K. Ahrenkiel, and A. J. Nozik, "Hot Carrier Cooling in GaAs: Quantum Wells vs Bulk", Phys. Rev. B, 48, 14675-14678 (1993).

  22.  

  23. Y. Rosenwaks, B. R. Thacker, A. J. Nozik, Y. Shapira, and D. Huppert, "Recombination Dynamics at InP/Liquid Interfaces", J. Phys. Chem., 97, 10421-10429 (1993).

  24.  

  25. Y. Rosenwaks, A. J. Nozik, and I. Yavneh, "The Effect of Electric Fields on time-resolved photoluminescence spectra in Semiconductors", J. Appl. Phys., 75, 4255-4257 (1994).

  26.  

  27. Y. Rosenwaks, B. R. Thacker, A. J. Nozik, R. J. Ellingson, K.C. Burr, and C. L. Tang, "Ultrafast Photoinduced Electron Transfer Across Semiconductor-Liquid Interfaces in the Presence of Electric Fields", J. Phys. Chem. (Letters Section) 98, 2739-2741 (1994).

  28.  

  29. Y. Rosenwaks, B. R. Thacker, and A. J. Nozik, R. J. Ellingson, K.C. Burr, and C. L. Tang, "Femtosecond Carrier Dynamics at InP/Liquid Interfaces in the Presence of Electric Fields" in "Ultrafast Phenomena IX", P. Barbara and W. Knox editors, Springer Verlag, Berlin, 409-411 (1994).

  30.  

  31. Y. Rosenwaks, B. R. Thacker, R. K. Ahrenkiel, A. J. Nozik, and I. Yavneh, "Photogenerated Carriers Dynamics Under the Influence of Electric Fields in III-V Semiconductors", Phys. Rev. B, 50, 1746-1754 (1994).

  32.  

  33. S.S. Kocha, M. W. Peterson, A. J. Nelson, Y. Rosenwaks, D. Arent, and J. Turner, "Investigation of Chemical Wet-Etch Surface Modification of GaInP2 using Photoluminescence, XPS, Capacitance measurements, and Photocurrent Spectroscopy", J. Phys. Chem., 99, 744-749 (1995).

  34.  

  35. Y. Rosenwaks, B. R. Thacker, K. Bertness, and A. J. Nozik, "Ideal Behavior at Illuminated Semiconductor-Liquid Junctions", J. Phys. Chem. (Letters Section), 99, 7871-7874 (1995).

  36.  

  37. D.J.Arent, S. S. Kocha, M.W. Peterson, Y. Rosenwaks, E. Grunbaum, and J.A.Turner, "Steady-State and Time-Resolved Luminescence Studies of Strained (Al,Ga,In)AsP/Ga0.52In0.48P Heterointerfaces", in “Wide Bandgap Semiconductors and Devices”  Electroch. Soc. Proc. Vol. 95-21, 285-292 (1995).

  38.  

  39. N. Bachrach-Ashkenasy, L. Kronik, Y. Shapira, Y. Rosenwaks, M. C. Hanna, M. Leibovitch, and P. Ram, “Surface Photovoltage Spectroscopy of Quantum Structures", Appl. Phys. Lett., 68, 879-881 (1996).

  40.  

  41. Y. Rosenwaks, B. R. Thacker, and A.J. Nozik, "The GaAs/GaInP2 Heterojunction for Studying Photoinduced Charge Transfer Processes", Appl. Surf. Sci. 106, 396-401 (1996).

  42.  

  43. E. Poles, S. Y. Goldberg, B. Fainberg, D. Huppert, M. C. Hanna, and Y. Rosenwaks, “The Effects of Carrier Transport on the Photoluminescence of Degenerate Electron-Hole Plasma in GaAs Epilayers", Appl. Surf. Sci. 106, 457-465 (1996).

  44.  

  45. E. Poles, S.Y. Goldberg, B. Fainberg, D. Huppert, M. C. Hanna, and Y. Rosenwaks, "Super Bandgap Time Resolved Luminescence Study of Degenerate Electron-Hole Plasma in Thin  GaAs Epilayers", J. Appl. Phys., 80, 5129-5137 (1996).

  46.  

  47. R. Cohen, S. Bastide, D. Cahen, J. Libman, A. Shanzer and Y. Rosenwaks, “Controlling Electronic Properties of CdTe by Adsorption of Dicarboxylic Acid Derivatives: Relating Molecular Parameters to Band Bending and Electron Affinity Changes, Advan. Mater. 9, 746-749 (1997).

  48.  

  49. E. Poles, D. Huppert, and Y. Rosenwaks, “A Study of Super Bandgap Time Resolved Luminescence in InP”, J. Semi. Sci. Tech., 12 , 1252-1256 (1997).

  50.  

  51. Y. Rosenwaks, X. Li, and T. J. Coutts, "Characterization of heat Treated ITO/InP Solar Cells", J. Vac. Sci. Tech. A 15, 2354-2358 (1997).

  52.  

  53. Y. Rosenwaks, “Microsphere Electron Multiplier applicability to the time-correlated photon-counting ”, Rev. Sci. Instr., 68 , 2911-2912 (1997).

  54.  

  55. R. Cohen, S. Bastide, D. Cahen, J. Libman, A. Shanzer, and Y. Rosenwaks, “Controlling Surfaces and Interfaces of Semiconductors Using Organic Molecules”, Optical Materials, 9, 394-400, (1998).

  56.  

  57. S. J. Diol, E. Poles, Y. Rosenwaks, and R. J. D. Miller “Electron Transfer Dynamics at   GaAs Surface Quantum Wells”, J. Phys. Chem.  102, 6193-6201, (1998).

  58.  

  59. R. Cohen, V. Lyahovitskaya, E. Poles, A. Liu, and Y. Rosenwaks, “Unusually Low Surface Recombination and Long Bulk Lifetime in CdTe Single Crystals”, Appl. Phys. Lett., 73, 1400-1402, (1998).

  60.  

  61. R. Shikler, T. Meoded, N. Fried, and Y. Rosenwaks, “Potential Imaging of Operating Light Emitting Devices using Kelvin Force Microscopy”, Appl. Phys. Lett, 74, 2972-2974 (1999).

  62.  

  63. M.Maharizi, O.Segal, E.Ben-Jacob, Y.Rosenwaks, T.Meoded, N.Croitoru and A.Seidman, “Physical properties of a:DLC films and their dependence on parameters of deposition and type of substrate”, Diamond and Related Materials, 8, 1050-1056 (1999).

  64.  

  65. R. Shikler, T. Meoded, N. Fried, and Y. Rosenwaks, “Two Dimensional Surface Band Structure of Operating Semiconductor Devices”, J. Appl. Phys. 86, 107-113 (1999).

  66.  

  67. L. Aimin, and Y. Rosenwaks, “Doping Dependence of Carrier Lifetime in InP Single Crystals: Radiative versus Nonradiative Recombination”, J. Appl. Phys. 86, 430-437 (1999). 

  68.  

  69. T. Meoded, R. Shikler, N. Fried, and Y. Rosenwaks, “Direct Measurement of Minority Carrier Diffusion Length using Atomic Force Microscopy”, Appl. Phys. Lett., 75, 2435-2437 (1999).

  70.  

  71. R. Cohen, L. Kronik, A. Shanzer, D. Cahen, L. Aimin, Y. Rosenwaks, J. K. Lorenz, and A. B. Ellis “Molecular Control over Semiconductor Surface Electronic Properties: Dicarboxylic Acids on CdTe, CdSe, GaAs, and InP”, J. Am. Chem. Soc., 121 10545-10553 (1999).

  72.  

  73.  

  74. Shalish, L. Kronik, G. Segal, Y. Rosenwaks, Y. Shapira, U. Tisch, J. Salzman

  75.  

  76. "Yellow luminescence and related deep levels in unintentionally doped GaN films"

  77. Phys. Rev. B 59, 9748, (1999).

  78.  

  79.  

  80. N. Ashkenasy, M. Leibovitch, Y. Rosenwaks, Y. Shapira, K. W. J. Barnham,

  81. J.Nelson,  J.Barnes,  "GaAs/AlGaAs Single quantum well p-i-n structures: A surface photovoltage study", J. Appl. Phys., 86, 6902, (1999).

  82.  

  83. R. Shikler, and Y. Rosenwaks, “Kelvin Probe Force Microscopy Using Near-field Optical Force Sensors”, Appl. Surf. Sci., 157, 256-262 (2000).

  84.  

  85. Y. Lubianiker, J. D. Cohen, G. Lubarsky, Y. Rosenwaks, J. Yang, and S. Guha, “Structural and Electronic Properties of Optimized a-Si:H Films”, J. of Non-Crys. Solid., 266-269, 253-257, (2000).

  86.  

  87.  

  88. S. Solodky, M. Leibovitch, N. Ashkenasy, Y. Rosenwaks, I. Hallakoun, Y. Shapira

  89.  

  90. "Detailed Characterization Methodology for Pseudomorphic High Electron Mobility Transistor Using Surface Photovoltage Spectroscopy"

  91. J. Appl. Phys., 88, 6775, (2000).

  92.  

  93. R. Shikler, T. Meoded, N. Fried, and Y. Rosenwaks, “Measuring Minority-Carrier Diffusion Length using a Kelvin Probe Force Microscope”, Phys. Rev. B., 61, 11041-11046, (2000).

  94.  

  95. R. Shikler, and Y. Rosenwaks, “Near-Field Surface Photovoltage”, Appl. Phys. Lett., 77, 836-839, (2000).

  96.  

  97. N. Ashkenasy, M. Leibovitch, Y. Rosenwaks, Y. Shapira, "Characterization of quantum well structures using surface photovoltage spectroscopy", Mater. Sci. and Eng., B 74, 125, (2000).

  98.  

  99. P. Urenski, M. Lesnykh, Y. Rosenwaks, G. Rosenman, and M. Molotskii, “Anisotropic Domain Structure of KTiOPO4 Crystals”, J. Appl. Phys., 90, 1950-1954 (2001).

  100.  

  101. Ruzin, N. Croitoru, G. Lubarsky, and Y. Rosenwaks, “Nanoscale potential profiles of silicon particle detectors measured by atomic force microscopy”, Nuclear Instruments and Methods in Physics Research A 461, 229-232 (2001).

  102.  

  103. M. Shvebelman, P. Urenski, R. Shikler, G. Rosenman, M. Molotskii, and Y. Rosenwaks, “Scanning Probe Microscopy of Well-Defined Periodically Poled Ferroelectric Domain Structure”, Appl. Phys. Lett., 80, 1806-9 (2002).

  104.  

  105. M. Shvebelman, A. Agronin, P. Urenski, Y. Rosenwaks, and G. Rosenman, “Kelvin Probe Force Microscopy of Periodically Poled Ferroelectric Domain Structure in KTiOPO4 Crystals”, Nanoletters, 2, 455-8, (2002).

  106.  

  107. S. Saraf, R. Shikler, and Y. Rosenwaks, “Microscopic Surface Photovoltage Spectroscopy”, Appl. Phys. Lett., 80, 2586-8 (2002).

  108.  

  109. G. Lubarsky, R. Shikler, N. Ashkenasy, and Y. Rosenwaks “Quantitative Evaluation of Local Charge Trapping in Dielectric Stacked Gate Structures using Kelvin Probe Force Microscopy”, J. Vac Sci. Tech., B20(5), 1914-1917, (2002).

  110.  

  111. G. Rosenman, P. Urenski, A. Agronin, Y. Rosenwaks and M. Molotskii, “Submicron Ferroelectric Domain Structures Tailored by High Voltage Scanning Probe Microscopy”, Appl. Phys. Lett., 82, 103-5 (2003).

  112.  

  113. M. Molotskii, P. Urenski, A. Agronin, M. Shvebelman, G. Rosenman, and Y. Rosenwaks “Ferroelectric Domain breakdown”, Phys. Rev Lett, 90, 107601-4, (2003).

  114.  

  115. Agronin, Y. Rosenwaks, and G. Rosenman, “ Piezoelectric Coefficient Measurements in Ferroelectric Single Crystals Using High Voltage Atomic Force microscopy”, Nanoletters, 3, 169-171, (2003).

  116.  

  117. S. Sadewasser, Th. Glatzel, R. Shikler, Y. Rosenwaks, and M. Ch. Lux-Steiner, “Resolution of Kelvin Probe Force Microscopy in Ultrahigh Vacuum: Comparison of Experiment and Simulation”, Appl. Surf. Sci., 210, 232-236, (2003).

  118.  

  119. G. Rosenman, P. Urenski, A. Agronin, A. Arie and Y. Rosenwaks, “Nanodomain Engineering in RbTiOPO4 Ferroelectric Crystals”, Appl. Phys. Lett., 82, 3934-6(2003).

  120.  

  121. Y. Rosenwaks, Michel Molotskii, Alex Agronin, Pavel Urenski, and Gil Rosenman, “High Voltage Atomic Force Microscopy: A New Technology for Nanoscale Optical Devices”, Proceedings of SPIE, 58, 213-220 (2003).

  122.  

  123. Tsimberova, M. Molotskii, and Y. Rosenwaks, “Minority Carrier Recombination in n-InP”, J. Appl. Phys., 93, 9797-9802, (2003).

  124.  

  125. Th. Glatzel, S. Sadewasser, R. Shikler, Y. Rosenwaks, and M. Ch. Lux-Steiner, “Kelvin Probe Force Microscopy on III-V Semiconductors: The Effect of Surface Defects on the Local Work Function”, Mate. Sci. and Eng. B., 102, 138-142, (2003).

  126.  

  127. Y. Rosenwaks, H. Gero, I. Tsimberova, and M. Molotskii, “Minority Carrier Recombination in p-InP”, Phys. Rev. B. 68, 115210-20, (2003).

  128.  

  129. N. Duhayon, P.Eyben, M. Fouchier, T. Clarysse, W. Vandervorst, D.Álvarez, S. Schoemann, M.Ciappa, M. Stangoni, P. Formanek, V. Raineri, F. Giannazzo, D. Goghero, Y. Rosenwaks, R. Shikler, S. Saraf, S. Sadewasser, N. Barreau, T. Glatzel, M. Verheijen, S.A.M. Mentink, R. Wiesendanger, M. Von Sprekselen, T. Maltezopoulos, L. Hellemans, ”Assesing the performance of two dimensional dopant profiling techniques”, J. Vac. Sci. Tech., B 22, 385-393 (2004).

  130.  

  131. S. Moscovich, A. Arie, R. Urneski, A. Agronin, G. Rosenman and Y. Rosenwaks “Non-collinear second harmonic generation in sub-micron-poled RbTiOPO4”, Optics Express, 12, 2236-42 (2004).

  132.  

  133. Y. Rosenwaks, Th. Glatzel, S. Sadewasser, and R. Shikler, “Kelvin Probe Force Microscopy of Semiconductor Surface Defects”, Phys. Rev. B., 70, 085320-7  (2004)

  134.  

  135. Agronin, Y. Rosenwaks, and G. Rosenman, “Ferroelectric Domain Reversal in LiNbO3 Crystals Using High Voltage Atomic Force Microscopy”, Appl. Phys. Lett., 85, 452-4, (2004).

  136.  

  137. O. Tal, Weiying Gao , Calvin K. Chan , Antoine Kahn , and Y. Rosenwaks, “Measurement of interface potential change and space charge region across metal/organic/metal layered structures using Kelvin probe force microscopy”, Appl. Phys. Lett., 85, 4148-4150 (2004).

  138.  

  139. Y. Rosenwaks, D. Dahan, M. Molotskii, and G. Rosenman, “Ferroelectric Domain Tailoring by Atomic Force Microscopy Tip Array”, Appl. Phys. Lett., 86, 12909-12911, (2005).

  140.  

  141. S. Saraf and Y. Rosenwaks, “Local Measurement of Semiconductor Band Bending and Surface Charge Using Kelvin Probe Force Microscopy”, Surf. Sci. Letters.,  574 L35-L39, (2005).

  142.  

  143. Agronin, M. Molotskii, Y. Rosenwaks, E. Strassburg, A. Boag, S. Mutchnik, and G. Rosenman, “Nanoscale Piezoelectric Coefficient Measurements in Ionic Conducting Ferroelectrics”, J. Appl. Phys., 97, 84312-6, (2005).

  144.  

  145. S. Saraf, M. Molotskii, and Y. Rosenwaks “Local Measurement of Surface States Energy Distribution in Semiconductors Using Kelvin Probe Force Microscope”, Appl. Phys. Lett., 86, 172104-6 (2005).

  146.  

  147. O. Tal, Y. Rosenwaks, Y. Roichman, N. Tessler, C. K. Chan and A. Kahn, “Nanoscale Measurements of Electronic Properties in Organic Thin Film Transistors”. MRS Proceedings, Organic Thin-Film Electronics, I4.5, 871E, (2005).

  148.  

  149. E. Strassburg, A. Boag, and Y. Rosenwaks, “Reconstruction of Electrostatic Force Microscopy Images”, Rev. Sci. Inst., 76, 83705-10, (2005).

  150.  

  151. Schwarzman, E. Grunbaum, E. Strasburg, E. Lepkifker, A. Boag, Th. Glatzel, Z. Barkay, M. Mazzer, K. Barnham, and Y. Rosenwaks, “Nanoscale Potential Distribution across Multi-Quantum Well Structures: Kelvin Probe and Secondary Electron Imaging”, J. Appl. Phys. 98, 84310-4, (2005).

  152.  

  153. Ludmila Frolov, Parag Chitnis, Yossi Rosenwaks, Chanoch Carmeli, and Itai Carmeli, “Fabrication of Photo-Electronic Device by Direct Chemical Binding of the Photosynthetic Reaction Center Protein to Metal Surfaces”, Adv. Mat. 17, 2434-7, (2005).

  154.  

  155. O. Tal, N. Tessler, C. K. Chan, A. Kahn, and Y. Rosenwaks, “Direct determination of the hole density of states in undoped and doped amorphous organic films with high lateral resolution”, Phys. Rev. Lett., 95 256405-8 (2005).

  156.  

  157. S. Saraf, A. Schwarzman, Y. Dvash, S. Cohen, D. Ritter and Y. Rosenwaks, “Nanoscale Measurement of the Energy Distribution of Semiconductor Surface States”, Phys. Rev. B., 73 35336-42 (2006).

  158.  

  159. O. Tal, Y. Preesant, C. K. Chan, Y. Roichman, A. Kahn, N. Tessler and Y. Rosenwaks, “Threshold voltage as a measure of molecular level shift in organic thin film transistors”, Appl. Phys. Lett.,  88 43509-11 (2006).

  160.  

  161. Agronin, Y. Rosenwaks, and G. Rosenman “Direct observation of pinning centers in ferroelectrics”, Appl. Phys. Lett., 88 072911-3 (2006).

  162.  

  163. Agronin, M. Molotskii, Y. Rosenwaks, G. Rosenman, B. J. Rodriguez, A. I. Kingon, and A. Gruverman, “Dynamics of Ferroelectric Domain Growth in the Field of Atomic Force Microscope”, J. Appl. Phys., 99 104102-6 (2006).

  164.  

  165. S. Shusterman, Y. Paltiel, A. Sher, V. Ezersky, and Y. Rosenwaks, “ High Density Nanometer Scale InSb Dots Formation Using Droplets Heteroepitaxial Growth by MOVPE”, J. Crystal Growth, 291, 363-9 (2006).

  166.  

  167. D. Dahan, M. Molotskii, G. Rosenman, and Y. Rosenwaks, “Nanoscale Ferroelectric Domain Reversal: The Role of Humidity”, Appl. Phys. Lett., 89 152902 (2006).

  168.  

  169. S. Shusterman, A. Reizman, Y. Paltiel, A. Sher, A. Schwarzman, E. Lepkifker and Y. Rosenwaks, “ Nanoscale Composition and Strain Mapping of  Nanocrystals Using Kelvin Probe Force Microscopy”, Nanoletters, 7, 2089-2093 (2007).

  170.  

  171. S. Yogev, Y. Levine, M. Molotskii, A. Schwarzman, O. Avayu, and Y. Rosenwaks, “Charging of thin dielectric Films Following Focused Ion Beam Irradiation”, J. Appl. Phys. 103, 64107-64112, ( 2008).

  172.  

  173. Magid, L. Burstein, O. Seitz, L. Segev, L. Kronik, and Y. Rosenwaks, “Electronic characterization of alkyl self assembled monolayer on silicon (100) using Kelvin probe force microscopy”, J. Phys. Chem. C. 112, 7145-7150, (2008).

  174.  

  175. Ludmila Frolov, Yossi Rosenwaks, Shachar Richter, Chanoch Carmeli and Itai Carmeli, Photoelectric Junctions Between GaAs and Photosynthetic Reaction Center Protein, J. Phys. Chem C. 112, 13426-13430, (2008).

  176.  

  177. O. Tal, I. Epstein, O. Baboor, C. K. Chan, A. Kahn, Y. Ganot, N. Tessler and Y. Rosenwaks, “Measurements of the Einstein Relation in doped and undoped Molecular Thin Films”, Phys. Rev. B, Rapid Comm., 77, 201201-4, (2008).

  178.  

  179. M.Shaked, O.Shaya, A. Doron, A. Cohen, I. Levy, and Y. Rosenwaks, “Electrostatics Properties of Molecular Gated BioFETS”, Proc. of 2008 International Symp. on Industrial Electronics, Cambridge

  180.  

  181. O.Shaya, M.Shaked, A. Doron, A. Cohen, I. Levy, and Y. Rosenwaks, “Distinguishing between Dipoles and Field Effects in Molecular Gated Transistors”, Appl. Phys. Lett.. 93, 043509-11, (2008).

  182.  

  183. Rozenblat, Y. Rosenwaks, L. Segev, and H. Cohen, "Electrical Depth Profiling in Thin SiON Layers", Appl. Phys. Lett. 94, 1, (2009).

  184.  

  185. O. Shaya, M. Shaked, Y. Usherenko, E. Halpern, A. Doron, A. Cohen, I. Levy, and Y. Rosenwaks, "Tracing the Mechanism of Molecular Gated Transistors", J. Phys. Chem. C, 113, 6163-8, (2009).

  186.  

  187. Praneet Adusumilli, Conal E. Murray, Lincoln J. Lauhon, David N. Seidman, , Ori Avayu, and Yossi Rosenwaks, " Three-Dimensional Atom-Probe Tomographic Studies of Nickel Monosilicide/Silicon Interfaces on a Subnanometer Scale", ECS Transactions, 19, 303-314 (2009).

  188.  

  189. Praneet Adusumilli, Lincoln J. Lauhon, David N. Seidman, Conal E. Murray, Ori Avayu, and Yossi Rosenwaks , "Tomographic study of atomic-scale redistribution of platinum during the silicidation of Ni 0.95Pt0.05/Si (100) thin films", Appl. Phys. Lett. 94, 113103-5, (2009).

  190.  

  191. Rozenblat, Y. Rosenwaks, and H. Cohen, " Hot-Electron Characteristics in Chemically Resolved Electrical Measurements of Thin Silica and SiON Layers",  Appl. Phys. Lett. 94, 213501-3, (2009). 

  192.  

  193. Shalev G., Halpern E., Doron A, Virobnik U., Cohen A., Sanhedrai Y., Rosenwaks Y. and Levy I., " Surface chemical modification induces nanometer scale electron confinement in field effect device"., J. Chem. Phys. 131 024702-6 (2009).

  194.  

  195. Lior Sepunaru, Irena Tsimberov, Ludmila Forolov, Chanoch Carmeli , Itai Carmeli, and Yossi Rosenwaks, " Picosecond Electron Transfer From Photosysnthetic Reaction Center Protein to GaAs ", Nanoletters, 9, 2751-5,  (2009).

  196.  

  197. E. Halpren, B. Khamaisi, O. Shaya, G. Shalev, A. Doron, I. Levy, and Y. Rosenwaks, " Electrostatic Properties of Silane Monolayers in an Electrolytic Environment", J. Phys. Chem. C 113, 16802-6, (2009).

  198.  

  199. E. Koren, N. Berkovich, J. E. Allen, L. Lauhon, and Y. Rosenwaks,  "Non-uniform doping distribution along Silicon nanowires measured by Kelvin Probe Force Microscopy and Scanning Photocurrent Microscopy", Appl. Phys. Lett. 95, 92105-7, (2009).

  200.  

  201. S. Shusterman, A. Reizman, A. Sher, Y. Paltiel, , A. Schwarzman, O. Azriel, A. Boag, Y. Rosenwaks, and P. L. Galindo “ Two Dimensional Imaging of Strain and Composition Induced Confinement Potential in III-V Quantum Dots ”, Europhys. Lett., 88 66003-9 (2009).

  202.  

  203. Volotsenko, M. Molotskii, Z. Barkay, J. Marczewski, P. Grabiec, B. Jaroszewicz, G. Meshulam, E. Grunbaum, and Y. Rosenwaks, "Secondary electron doping contrast: Theory based on HRSEM and KPFM Measurements", J. Appl. Phys. 107, 014510-7, (2010).

  204.  

  205. E. Koren, N. Berkovich, and Y. Rosenwaks, "Measuring the active dopant  distribution and diffusion constant in Silicon nanowires", Nanoletters, 10, 1163-1167, (2010).

  206.  

  207. O. Shaya, E. Halpren, B. Khamaisi, M. Shaked, Y. Usherenko, G. Shalev, A. Doron, I. Levy, and Y. Rosenwaks, "Self-assembeled monolayers on molecular gated transistors", Appl. Surf. Sci., 256, 5789-95  (2010).

  208.  

  209. R. Shikler and Y. Rosenwaks, “Response to comment on "Direct measurement of minority carriers diffusion length using Kelvin probe force microscopy" Appl. Phys. Let., 96, 216102, (2010).

  210.  

  211. O. Shaya, I. Amit, and Y. Rosenwaks, "Electrostatic effects of real (non-ideal) polar self-assembled monolayers", Applied Materials & Interfaces, 2, 2289-92, (2010).   

  212.  

  213. O. Shaya, H. Einati, N. Fishelson, Y. Shacham-Diamand and  Y. Rosenwaks, " Transistor Gating by Polar Molecular Monolayers", Appl. Phys. Lett., 97, 053501-3, (2010).

  214.  

  215. S. Yogev, R. Matsubara, M. Nakamura, and Y. Rosenwaks, "Local Charge Accumulation and Trapping in Grain Boundaries of Pentacene Thin Film Transistors", Organic Electronics, 11, 1729-35, (2010).

  216.  

  217. E. Koren, J.K. Hyun, U.Givan, E. Hemesath, L.J. Lauhon and Y.Rosenwaks,  "Obtaining Uniform Dopant Distribution in VLS-Grown Si Nanowires", Nanoletters, 11, 183-7, (2011).

  218.  

  219. G. Elias, T. Glatzel, E. Meyer, A. Schwarzman, A. Boag, and Y. Rosenwaks, “ The role of the cantilever in Kelvin probe force microscopy measurements”,

  220. Beilstein J. Nanotechnol., 2, 252–260, (2011).

  221.  

  222. S. Sadewasser, D. Abou-Ras, D. Azulay, R. Baiera, I. Balberg, D. Cahen, S. Cohen , K. Gartsman, G. Karuppiah, J. Kavalakkatta, W. Lic, O. Millo , Th. Rissoma, Y. Rosenwaks,  H.W. Schock , A. Schwarzman , and T. Unolda, “Nanometer-scale electronic and microstructural properties of grain boundaries in Cu(In,Ga)Se2”, Thin Solid Films, 519, 7341-6 (2011).  

  223.  

  224. E. Koren, G. Elias, A. Boag, E. Hemesath, L.J. Lauhon and Y.Rosenwaks,     " Direct measurement of individual deep traps in single silicon nanowire ", Nanoletters, 11, 2499-2502, (2011).

  225.  

  226. S. Yogev, E. Halpern, R. Matsubara, M. Nakamura, and Y. Rosenwaks, "Direct Measurement of Density of states in Pentacene Thin Film Transistors", Phys. Rev. B. 84, 165124-8 (2011).

  227. E. Koren, N.Berkovitch, O.Azriel, A.Boag, Y.Rosenwaks, E.R.Hemesath  and L.J.Lauhon, "Direct Measurement of Nanowire Schottky Junction Depletion Region", Appl. Phys. Lett. 99, 223511-3, (2011).

  228.  

  229. U. Givan, J. K. Hyun, E. Koren, J.S. Hammond, D. F. Paul, L. J. Lauhon, and Y. Rosenwaks, " Direct Measurement of Inhomogeneous Longitudinal Dopant Distribution in SiNWs Using Nano-Probe Scanning Auger microscopy", MRS Proceedings, 1349, (2011). mrss11-1349-dd08-05 doi:10.1557/opl.2011.1421.

  230.  

  231. Roni Pozner, Gideon Segev, Rona Sarfaty, Abraham Kribus and Yossi        Rosenwaks,  "Vertical Junction Cells For Concentrating Photovoltaics", Progress in Photovoltaics: Research and Applications, 20, 197-208, (2012).

  232.  

  233. G. Shalev, Y. Rosenwaks,  and Ilan Levy, " The Interplay Between pH Sensitivity and Label-Free Protein Detection in Immunologically Modified Nano-Scaled Field-Effect Transistor", Biosensors and Bioelectronics, 31, 510-5, (2012).

  234.  

  235. O. Shaya, I. Amit, H. Einati, L. Burstein, Y. Shacham-Diamand and Y.            Rosenwaks, " Molecular Gating of Transistors by Amine-terminated Layers",  Appl. Surf. Sci., 258, 4069-72, (2012).

  236.  

  237. J. E. de Vries, and Y. Rosenwaks, "Measuring the Concentration and Energy Distribution of Interface States Using a Non-Contact Corona Oxide Semiconductor Method",  Appl. Phys. Lett. 100, 082111-3, (2012).

  238.  

  239. R. Baier, J. Lehmann, S. Lehmann, T. Rissom, C. A. Kaufmann, A.  Schwarzmann, Y. Rosenwaks, M. Ch. Lux-Steiner, and S. Sadewasser, "   Electronic properties of grain boundaries in Cu(In,Ga)Se2 thin films with various Ga-contents", Solar Energy Materials & Solar Cells, 103, 86-92, (2012).

  240.  

  241. H. Topornik,  I.Carmeli, I. Volotsenko, M. Molotskii, Y.Rosenwaks, C. Carmeli and N. Nelson"Large Photovoltage Generated by Plant Photosystem I Crystals", Adv. Materials, 24, 2988-2991 (2012).  Highlighted in Nature and in Nature Photonics.

  242.  

  243. Gideon Segev, Y. Rosenwaks, and A. Kribus  " Efficiency of Photon Enhanced    Thermionic Emission Solar Converters",  Solar Energy Materials & Solar Cells", 107, 125–130, (2012).

  244.  

  245. E. Halpern, G. Elias, A. Kretinin, H. Shtrikman, and Y. Rosenwaks, “Direct measurement of surface states density and energy distribution in individual InAs nanowires”, Appl. Phys. Lett. 100, 262105-262105 (2012).

  246.  

  247. O. Hazut, A. Agarwala, I. Amit, T. Subramani, S. Zaidiner, Y. Rosenwaks, and R. Yerushalmi, “Contact doping of silicon wafers and nanostructures with phosphine oxide monolayers”, ACS Nano 6, 10311-18 (2012).

  248.  

  249. G. Shalev, G. Landman, I. Amit, Y. Rosenwaks, and I. Levy, “Specific and Label-Free Femtomolar Biomarker Detection with Electrostatically-Formed Nanowire Biosensor”, Asia Nature Materials, 5, e41; doi:10.1038/am.2012.75, (2013).

  250.  

  251. S. Yogev, R. Matsubara, M. Nakamura, U. Zschieschang, H. Klauk, and Y. Rosenwaks, "Fermi Level Pinning by Gap States in Organic Semiconductors",  Phys. Rev. Lett., 110, 036803-6 (2013).

  252.  

  253. G. Segev, A. Kribus, and Y. Rosenwaks, “High performance isothermal photo-thermionic solar converters" Solar Energy Materials & Solar Cells 113, 114-193 (2013).

  254.  

  255. S. U. Nanayakkara, G. Cohen, C. S. Jiang, M. J. Romero, K. Maturova,            M. Al-Jassim, J.van de Lagemaat, Y. Rosenwaks, and J. M. Luther, Nanoletters,     13, 1278-1284 (2013).

  256.  

  257. Amit, Uri Givan, Justin G. Connell, Dennis F. Paul, John S. Hammond, Lincoln J. Lauhon and Y. Rosenwaks, "Spatially Resolved Correlation of Active and Total Doping, Concentrations in VLS Grown Nanowires", Nanoletters, 13, 2598-2604 (2013).

  258.  

  259. G. Cohen, E Halpern, S U Nanayakkara, J M Luther, C. Held, R Bennewitz, A Boag and Y. Rosenwaks, " Reconstruction of surface potential from Kelvin probe force microscopy images" Nanotechnology, 24, 295072-84 (2013).

  260.  

  261. A. Henning, Gino Günzburger, Res Jöhr, Yossi Rosenwaks, Biljana Bozic- Weber, Catherine E. Housecroft, Edwin C. Constable, Ernst Meyer and Thilo   Glatzel,"Kelvin Probe Force Microscopy of Nanocrystalline TiO2 Photoelectrodes", Beilstein J. Nanotechnol 4,  418-428  (2013).

  262.  

  263. G. Segev, Y. Rosenwaks, and A. Kribus, “Loss mechanisms and back surface field effect in photon enhanced thermionic emission converters”, J. Appl. Phys., 114, 044505-14 (2013).

  264.  

  265. KunHo Yoon, Jerome K. Hyun, Justin G. Connell, Iddo Amit, Yossi Rosenwaks, and Lincoln J. Lauhon, “Barrier Height Measurement of Metal Contacts to Si Nanowires Using Internal Photoemission of Hot Carriers”,                      Nanoletters, 13, 6183−6188, (2013).

  266.  

  267. Nadav Amdursky, Gil Shalev, Amir Handelman, Simon Litsyn, Amir Natan, Yakov Roizin, Yossi Rosenwaks, Daniel Szwarcman, and Gil Rosenman, “ Bioorganic nanodots for non-volatile memory devices”, APL Materials, 1, 062104-6, (2013).

  268.  

  269. O. Hazut, B.C. Huang, A. Pantzer, I. Amit, Y. Rosenwaks, A. Kohn, C.-S. Chang, Y.-P. Chiu, and R. Yerushalmi, “Parallel p-n Junctions across  Nanowires by One-Step Ex Situ Doping”, ACS Nano, 8, 8357–8362, (2014).

  270.  

  271. Eran Edri, Saar Kirmayer, Alex Henning, Sabyasachi Mukhopadhyay, Konstantin Gartsman, Yossi Rosenwaks, Gary Hodes, and David Cahen,                   “Why Lead Methylammonium Tri-Iodide Perovskite-Based Solar Cells Require a Mesoporous Electron Transporting Scaffold (but Not Necessarily a Hole Conductor)”, Nanoletters, 14, 1000-1004, (2014).

  272.  

  273. S. Yogev, and Y. Rosenwaks, “Low density of gap states and unpinned Fermi level in n-channel organic thin-film transistors” Phys. Rev. B, rapid comm. 89, 081409-081415, (2014).

  274.  

  275. Amit, D. Englander, D. Horvitz, Y. Sasson, and Y. Rosenwaks,       “Density and Energy Distribution of Interface-states in the Grain-boundaries of Poly-Silicon Nanowire”, Nanoletters, 14, 6190−6194, (2014).

  276.  

  277. Eliezer Halpern, Gilad Cohen, Shahar Gross, Alexander Henning, Max Matok, Andrey V. Kretinin, Hadas Shtrikman, and Yossi Rosenwaks, “Measuring surface state density and energy distribution in InAs nanowires”,  Phys. Status Solidi, 211, 473–482 (2014).

  278.  

  279. Alex Henning, and Y. Rosenwaks, "Measurement of the electrostatic edge effect in wurtzite GaN nanowires",Appl. Phys. Lett. 105, 213107-9, (2014).

  280.  

  281. Irina Volotsenko, Michel Molotskii, Anna Borovikova, Nathan Nelson,  and Yossi Rosenwaks, “Evidence for Deep Acceptor Centers in Plant Photosystem I Crystals”, J. Phys. Chem. B 119, 1374-1379, (2015).

  282.  

  283. Eliezer Halpern, Alexander Henning, Hadas Shtrikman, Riccardo Rurali, Xavier Cartoixà, and Yossi Rosenwaks, “Room Temperature Observation of Quantum Confinement in Single InAs Nanowires”, Nanoletters, 15, 481-485, (2015).

  284.  

  285. Alex Dymshits, Alex Henning, Gideon Segev, Yossi Rosenwaks & Lioz Etgar, “The electronic structure of metal oxide/organo metal halide perovskite junctions in perovskite based solar cells”, Nature Scientific Reports, 5:8704, (2015).

  286.  

  287. Alex Henning, Nandhini Swaminathan, Andrey Godkin, Gil Shalev, Iddo Amit, and Yossi Rosenwaks, “Tunable diameter electrostatically-formed nanowire for high sensitivity gas sensing”, Nano Research, DOI 10.1007/s 12274-01, (2015).

  288.  

  289. Henning, M. Molotskii, N. Swaminathan, Y. Vaknin, A. Godkin, G. Shalev, and Y. Rosenwaks, "Electrostatic Limit of Detection of Nanowire-based Sensors”, Small, DOI: 10.1002/smll.201500566, (2015).

  290.  

  291. G. Segev, I. Amit, A. Godkin, A. Henning, and Y. Rosenwaks, "Multiple State Electrostatically Formed Nanowire Transistors”, IEEE Electron Device Lett. DOI: 10.1109/LED.2015.2434793, (2015).

  292.  

  293. G. Segev, Y. Rosenwaks, and A. Kribus “Limit of efficiency for photon-enhanced thermionic emission vs. photovoltaic and thermal conversion”, Solar Energy Mat. Solar Cells 140, 464-476, (2015).

  294.  

  295. G. Segev, D. Weisman, Y. Rosenwaks, and A. Kribus, “Negative space charge effects in PETE solar converters”, Appl. Phys. Lett., 107, 013908, (2015).

  296.  

  297. Y. Sharabani, Y.Rosenwaks and D. Eger, “Mechanism of Fast Current Interruption in p−π−n Diodes for Nanosecond Opening Switches in High-Voltage-Pulse Applications, Phys. Rev. Appl., 4, 014015, (2015).

  298.  

  299. Shamir, I. Amit, D. Englander, D. Horvitz, and Y. Rosenwaks, “Potential barrier height at the grain boundaries of a poly-silicon nanowire”, Nanotechnology, 26, 355201-6 (2015).

  300.  

  301. Amit, N. Jeon, L. J. Lauhon, and Y. Rosenwaks, “The Impact of Dopant Compensation on Graded p-n Junctions in Si Nanowires”, ACS Applied Materials & Interfaces,  8 (1), pp 128–134, (2016).

  302.  

  303. J. S. Friedman, A. Henning, A. Godkin, Y. Rosenwaks, and A. V. Sahakian, "Threshold Logic with Electrostatically Formed Nanowires"  IEEE Transaction on Electron Devices,63, 1388-91, (2016).

  304.  

  305. M. OrrI, E. Repiso, S. Carapezzi, A. Henning, F. Martelli, S. Roddaro, A.   Franciosi, Y. Rosenwaks, A. Cavallini, and S. Rubini, " A Roadmap for Controlled and Efficient n-Type Doping of Self-Assisted GaAs Nanowires Grown by Molecular Beam Epitaxy”, Adv. Funct.  Mat.  DOI:  10.1002/adfm.201504853, (2016).

  306.  

  307. N. Swaminathan, Alex Henning, Yonathan Vaknin, Klimentiy Shimanovich, Andrey Godkin, Gil Shalev, and Yossi Rosenwaks, “Dynamic Range Enhancement Using the Electrostatically Formed Nanowire Sensor”, ACS Sensors,  DOI: 10.1021/acssensors.6b00096, (2016).

  308.  

  309. Y. Sharabani, Inbar Shafir, Shoval Zoran, Arie Raizman, Ariel Sher, Yossi Rosenwaks, and David Eger,” Validation of Fast Current Interruption Mechanism in Sub-Nanosecond High Voltage Switching Diodes”, IEEE Electron Device Lett., 37,1041-4, (2016).

  310.  

  311. R. Dagan, Y. Rosenwaks, A. Kribus, A.Walker, and F. Dimroth                    “Minority Carrier Recombination of Ordered Ga 0.51 In 0.49P at High Temperatures”, Appl. Phys. Lett.  109, 222106-9, (2016).

  312.  

  313. N. Swaminathan, Alex Henning, Titel Jurca, Gil Shalev and Yossi Rosenwaks, “Effect of varying chain length of n-alcohols and n-alkanes detected with electrostatically-formed nanowire sensor”, Sensors and Actuators B 248, 240–246  (2017).

  314.  

  315. M. Assif, G. Segev and Y. Rosenwaks,  “Dynamic and Power Performance of Multiple State Electrostatically Formed Nanowire Transistors”, IEEE Transaction on Electron Devices, 64, 571-8, (2017).

  316.  

  317. M. Molotskii, K. Shimanovich, and Y. Rosenwaks, “Anti-Fowler Temperature Regime in Photoemission from n-Type Semiconductors with Surface Accumulation Layer”, J. Mod. Phys. 8, 1020-8, (2017).

  318.  

  319. K. Shimonovitch, T. Coen, Y. Vaknin, A. Henning, J. Hayon, Y. Roizin, and Y. Rosenwaks, “Electrostatically Formed Nanowire based Silicon-on-  Insulator tri-gate Field Effect Transistor for effective sensing of temperature”, IEEE Transaction on Electron Devices, 64, 3836-40. (2017).

  320.  

  321. Henning, N. Swaminathan, Y. Vaknin, T. Jurca, K. Shimanovich, G.Shalev, and Y. Rosenwaks, “Controlling Silicon Gas Sensor Response Using Fringing Electric Fields”, ACS Sensors, 3, 128-134 (2018).

  322.  

  323. S. Aziza, A. Ripp, D. Horvitz and Y. Rosenwaks, “Control of Polysilicon Nanowires device conductivity by changing the ion implant angle”, Materials Science in Semiconductor Processing, 75, 43-50, (2018).

  324.  

  325.  

  326. N. Mahapatra, Avi Ben-Cohen, Yonathan Vaknin, Alex Henning, Joseph Hayon, Klimentiy Shimanovich, Hayit Greenspan, and Yossi Rosenwaks, “Electrostatic Selectivity of Volatile Organic Compounds Using Electrostatically Formed Nanowire Sensor” ACS Sensors, 3, 709-715, (2018).

  327.  

  328. Peled, O. Amrani, and Y. Rosenwaks, and Yhonatan Vaknin, “Novel Paradigm for Integrated Circuits Based on the MSET Transistor”,IEEE Transaction on Electron Devices,. 65, 1192-7  (2018).

  329.  

  330. Assaf Peled, Xuan Hu, Ofer Amrani, Joseph S. Friedman, and Yossi Rosenwaks, “An SRAM Based on the MSET Device”, IEEE Transaction on Electron Devices, 66, 1262-7 (2019).

  331.  

  332. R. Dagan, Y. Vaknin, A. Henning, Y. Shang,  L. J. Lauhon, and Y. Rosenwaks, “Two-dimensional charge carrier distribution in MoS2 monolayer and multilayers”, Appl. Phys. Lett., 114, 101602-4, (2019).

  333.  

  334. K. Shimanovich, Z. Mutsafi, M. Schah-Caplan, E.Pikhay, Y.Roizin, and Y. Rosenwaks, “Efficient temperature sensor based on SOI gate all around Electrostatically Formed Nanowire transistor”. IEEE Transactions on Electron Devices, 66, 3549-3553, (2019).

  335.  

  336. R. Dagan, I. Amit, Y. Vaknin, and Y. Rosenwaks “Accurate Method To Determine the Mobility of Transition-Metal  Dichalcogenides with Incomplete Gate Screening”, ACS Appl. Mater. Interfaces, 11 , 44406-12, (2019).

  337.  

  338. Y. Vaknin, R. Dagan, and Y. Rosenwaks “Pinch-Off Formation in Monolayer and Multilayers MoS2 Field-Effect Transistors”, Nanomaterials 9 (6), 882-891, (2019).

  339.  

  340. Shaked, Alexandre W. Walker, Ronen Dagan, Abraham Kribus, Yossi Rosenwaks, Jens Ohlmann, Dirk Lackner, and Frank Dimroth, “Carrier recombination dynamics in Ga 0.51In 0.49P double-heterostructures up to 500 K, Semiconductor Sci. Tech., 9, 882-891, (2020).

  341.  

  342. K. Shimanovich, Z. Mutsafi, Y.Roizin, and Y. Rosenwaks, “CMOS compatible SOI nanowire FET with charged dielectric for temperature sensing applications”. J.Phys.D: Appl. Phys., 53, 065101-6, (2020).

  343.  

  344. K. Shimanovich, Z. Mutsafi, and Y. Rosenwaks, “Effective uncooled infrared bolometer based on SOI gate all around electrostatically formed nanowire transistors”. Eng. Res. Express, 2, 035005-13, (2020).

  345.  

  346. R. Dagan, Y. Vaknin, and Y. Rosenwaks, “Gap state distribution and Fermi level pinning in monolayer to multilayer MoS2 field effect transistors”, Nanoscale, 12, 8883-8889, (2020).